1/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a 4v drive nch mosfet RSR030N06 z structure z dimensions (unit : mm) silicon n-channel mosfet z features 1) low on-resistance. 2) small surface mount package (tsmt3). z application z inner circuit switching z packaging specifications package code taping basic ordering unit (pieces) RSR030N06 tl 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 when mounted on a ceramic board source current (body diode) 60 150 ? 55 to + 150 20 3 12 0.8 12 1.0 z thermal resistance parameter c/w rth(ch-a) symbol limits unit c hannel to ambient 125 ? when mounted on a ceramic board ? tsmt3 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.95 0.95 0.4 abbreviated symbol : py (1) gate (2) source (3) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (3) (1) (2)
2/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a data sheet RSR030N06 z electrical characteristics (ta=25 c) gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed parameter symbol i gss y fs min. ?? 10 av gs = 20v, v ds =0v v dd 30v typ. max. unit conditions v (br) dss 60 ?? vi d = 1ma, v gs =0v i dss ?? 1 av ds = 60v, v gs =0v v gs (th) 1.0 ? 2.5 v v ds = 10v, i d = 1ma ? 60 85 i d = 3a, v gs = 10v r ds (on) ? 70 100 m ? m ? m ? i d = 3a, v gs = 4.5v ? 75 105 i d = 3a, v gs = 4v 2.1 ?? sv ds = 10v, i d = 3a c iss ? 380 ? pf v ds = 10v c oss ? 95 45 ? pf v gs =0v c rss ? 8 ? pf f=1mhz t d (on) ? 12 ? ns t r ? 30 ? ns t d (off) ? 10 ? ns t f ? 5.0 ? ns q g ? 1.6 nc q gs ? 1.4 ? nc v gs = 5v q gd ?? nc i d = 3a ? ? ? ? ? ? ? ? ? v dd 30 v i d = 1.5a v gs = 10v r l 20 ? r g =10 ? r l 10 ? r g =10 ? ? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v i s = 3a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? pulsed ?
3/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a data sheet RSR030N06 z electrical characteristics curves 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 v gs = 2.5v ta=25c pulsed v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.8v v gs = 2.2v 0.001 0.01 0.1 1 10 0 0.5 1 1.5 2 2.5 3 v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 10 100 1000 0.01 0.1 1 10 v gs = 4.0v v gs = 4.5v v gs = 10v ta= 25c pulsed 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 0 1 2 3 4 5 6 0246810 v gs = 2.5v ta=25c pulsed v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.8v v gs = 2.2v 10 100 1000 0.01 0.1 1 10 v gs = 4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 10 100 1000 0.01 0.1 1 10 v gs = 10v pulsed ta=125c ta=75c ta=25c ta= -25c 0.1 1 10 0.01 0.1 1 10 v ds = 10v pulsed ta= -25c ta=25c ta=75c ta=125c 10 100 1000 0.01 0.1 1 10 v gs = 4.0v pulsed ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current drain current : i d [a] drain-source voltage : v ds [v] drain-source voltage : v ds [v] drain current : i d [a] drain current : i d [a] gate-source voltage : v gs [v] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] forward transfer admittance : |yfs| [s] drain-current : i d [a] reverse drain current : is [ a ] source-drain voltage : v sd [v]
4/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.04 - rev.a data sheet RSR030N06 z measurement circuits f ig.1-1 switching time measurement circu it v gs r g v d s d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) r g v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 0 50 100 150 200 250 0 5 10 15 20 ta=25c pulsed i d = 1.5a i d = 3.0a 0 2 4 6 8 10 0246810 ta=25c v dd = 30v i d = 3.0a r g =10 ? pulsed 10 100 1000 0.01 0.1 1 10 100 ciss coss crss ta=25c f=1mhz v gs =0v 1 10 100 1000 0.01 0.1 1 10 t f t d (on) t d (off) ta=25c v dd = 30v v gs =10v r g =10 ? pulsed t r fig.10 static drain-source on-state resistance vs. gate source voltage fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source voltage fig.11 switching characteristics static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : v gs [v] switching time : t [ns] drain-current : i d [a] gate-source voltage : v gs [v] total gate charge : qg [nc] drain-source voltage : v ds [v] capacitance : c [pf]
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